Simulation and Investigation of Cd-free SnS-based Solar Cells with a ZnSe as a Buffer Layer using SCAPS-1D


Authors : Tamosree Saha; Md. Shafiqul Islam; Md Abdul Halim; Yingking Mitra Prianka; Md. Mostak Ahmed

Volume/Issue : Volume 7 - 2022, Issue 10 - October

Google Scholar : https://bit.ly/3IIfn9N

Scribd : https://bit.ly/3EjPgG7

DOI : https://doi.org/10.5281/zenodo.7313757

Using SCAPS-1D software, a highly efficient SnS thin film solar cell has been explored and simulated in this study. A promising material for thin-film solar cells, Tin Sulfide (SnS) is non-toxic, abundant on Earth, inexpensive, and readily available. The optical characteristics that make up an excellent absorber layer, such as a band gap of roughly 1.6 eV and a high absorption coefficient more than 104 cm-1, etc. This study analyzes how the thickness of the buffer and absorber layers affects the efficiency of solar cells. Due to its significant hazardous impact on the environment, this article aimed to discourage the use of cadmium in the production of solar cells. Numerous photovoltaic parameters have been determined using ZnSe as a buffer layer. Efficiency (η), Fill Factor (FF), Open-circuit Voltage (Voc), Short-circuit current (Jsc), Voltage vs Junction Capacitance characteristics and other parameters have been examined in this work by altering the thickness of the absorber layer between 3 and 8 µm and the thickness of the buffer layer between 0.05 and 0.5 µm. When the absorber layer thickness

Keywords : SnS, ZnSe, SCAPS-1D, I-V Measurement, C-V Curve, Temperature, Resistance

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