Authors :
Gowtham Reddy Annapareddy; Jyotirmoy Pathak
Volume/Issue :
Volume 8 - 2023, Issue 2 - February
Google Scholar :
https://bit.ly/3IIfn9N
Scribd :
https://bit.ly/3EMY8oB
DOI :
https://doi.org/10.5281/zenodo.7690255
Abstract :
The scaling of conventional silicon transistors
has become increasingly complex due to the degradation
of carrier mobility and increase in wire resistance. As a
result, researchers have started to investigate various
unique materials to meet ITRS goals. Two-dimensional
(2D) materials such as CNTs, graphene, GNRs, and
TMDs with chemical MX2 forms (e.g., MoS2) have
received significant attention. Among them, TMDs have a
1-2 eV band gap by default, making them a promising
candidate for future transistors. In this work, we
proposed a MoS2 transistor model and study the voltagecurrent (I-V) properties of single-layer MoS2FETs. The
compact MoS2FET model is introduced and implemented
in SPICE for circuit simulations to determine the
efficiency of MoS2FET-based circuits. The proposed
model is simplified to reduce computational difficulty and
is compatible with SPICE.A monolayer MoS2 has low
leakage current and a significantly larger band gap than
a 10-nm tube. In this article, we analysed a single-layer
MoS2 transistor system in accordance with the ITRS
specifications and test and verify the results against
various channel dimension values and technical
requirements. Section II provides more information on
MoS2 transistor modelling and introduces the proposed
versatile, SPICE-compatible platform. The experimental
results are discussed in Section III, and the conclusions
are drawn in Section IV. Overall, this study contributes to
the development of high-performance transistors based
on 2D materials, particularly TMDs, which have the
potential to revolutionize the field of wearable electronics
and sensors.
Keywords :
Transition Metal dichalcogenides (TMD’s), Molybdenum disulfide (MoS2), MoS2 inverter, SPICE modelling.
The scaling of conventional silicon transistors
has become increasingly complex due to the degradation
of carrier mobility and increase in wire resistance. As a
result, researchers have started to investigate various
unique materials to meet ITRS goals. Two-dimensional
(2D) materials such as CNTs, graphene, GNRs, and
TMDs with chemical MX2 forms (e.g., MoS2) have
received significant attention. Among them, TMDs have a
1-2 eV band gap by default, making them a promising
candidate for future transistors. In this work, we
proposed a MoS2 transistor model and study the voltagecurrent (I-V) properties of single-layer MoS2FETs. The
compact MoS2FET model is introduced and implemented
in SPICE for circuit simulations to determine the
efficiency of MoS2FET-based circuits. The proposed
model is simplified to reduce computational difficulty and
is compatible with SPICE.A monolayer MoS2 has low
leakage current and a significantly larger band gap than
a 10-nm tube. In this article, we analysed a single-layer
MoS2 transistor system in accordance with the ITRS
specifications and test and verify the results against
various channel dimension values and technical
requirements. Section II provides more information on
MoS2 transistor modelling and introduces the proposed
versatile, SPICE-compatible platform. The experimental
results are discussed in Section III, and the conclusions
are drawn in Section IV. Overall, this study contributes to
the development of high-performance transistors based
on 2D materials, particularly TMDs, which have the
potential to revolutionize the field of wearable electronics
and sensors.
Keywords :
Transition Metal dichalcogenides (TMD’s), Molybdenum disulfide (MoS2), MoS2 inverter, SPICE modelling.