Realization of TMD Circuits: Inverter, and Operational Amplifier


Authors : Gowtham Reddy Annapareddy; Jyotirmoy Pathak

Volume/Issue : Volume 8 - 2023, Issue 2 - February

Google Scholar : https://bit.ly/3IIfn9N

Scribd : https://bit.ly/3EMY8oB

DOI : https://doi.org/10.5281/zenodo.7690255

The scaling of conventional silicon transistors has become increasingly complex due to the degradation of carrier mobility and increase in wire resistance. As a result, researchers have started to investigate various unique materials to meet ITRS goals. Two-dimensional (2D) materials such as CNTs, graphene, GNRs, and TMDs with chemical MX2 forms (e.g., MoS2) have received significant attention. Among them, TMDs have a 1-2 eV band gap by default, making them a promising candidate for future transistors. In this work, we proposed a MoS2 transistor model and study the voltagecurrent (I-V) properties of single-layer MoS2FETs. The compact MoS2FET model is introduced and implemented in SPICE for circuit simulations to determine the efficiency of MoS2FET-based circuits. The proposed model is simplified to reduce computational difficulty and is compatible with SPICE.A monolayer MoS2 has low leakage current and a significantly larger band gap than a 10-nm tube. In this article, we analysed a single-layer MoS2 transistor system in accordance with the ITRS specifications and test and verify the results against various channel dimension values and technical requirements. Section II provides more information on MoS2 transistor modelling and introduces the proposed versatile, SPICE-compatible platform. The experimental results are discussed in Section III, and the conclusions are drawn in Section IV. Overall, this study contributes to the development of high-performance transistors based on 2D materials, particularly TMDs, which have the potential to revolutionize the field of wearable electronics and sensors.

Keywords : Transition Metal dichalcogenides (TMD’s), Molybdenum disulfide (MoS2), MoS2 inverter, SPICE modelling.

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