Authors : Ujjwal Prasad; Pushp Raj Harsh; S. R. Kumar; K. Prasad

Volume/Issue : Volume 11 - 2026, Issue 2 - February

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Google Scholar : https://tinyurl.com/3eddhvkk

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DOI : https://doi.org/10.38124/ijisrt/26feb447

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Abstract : Cadmium telluride (CdTe) heterojunction photodetectors have emerged as highly promising optoelectronic devices due to their excellent optoelectronic properties, high absorption coefficient in the visible spectrum, and compatibility with large-area fabrication. This review summarizes the fundamental principles, material properties, device architectures, fabrication techniques, performance characteristics, and recent advances in CdTe-based heterojunction photodetectors. Challenges such as interface defects, dark current suppression, and spectral response tailoring are discussed, along with future research directions aimed at enhancing device performance for applications in imaging, sensing, and communication.

Keywords : Heterojunction, photodetectors, Band Diagram, Photoresponse and Time Response.

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