Double Sided Drift Method Reduces the Effect of Crystals’ Inhomogeneity to Si(Li) Detector’s ElectroPysicsal Characteristics


Authors : Nursultan Japashov; Ramizulla Muminov; Yorkin Toshmurodov; Ahmet Saymbetov; Zhang Jing; Madiyar Nurgaliyev; Nurzhigit Kuttybay; Nursultan Koshkarbay; Batyrbek Zholamanov

Volume/Issue : Volume 7 - 2022, Issue 9 - September

Google Scholar : https://bit.ly/3IIfn9N

Scribd : https://bit.ly/3SBentW

DOI : https://doi.org/10.5281/zenodo.7133897

Abstract : This work is devoted to find an optimal mode of doublesided drift of lithium ions into monocrystalline silicon in order to obtain large sized Si(Li) p-i-n structured detectors of X-ray radiation. As it was shown in the work the proposed method of obtaining large sized Si(Li) p-i-n structured detectors helps to reduse the effect of impurity inhomogeneities in the initial silicon crystal to detectors' electro-physical characteristics.

Keywords : Si(Li) Detectors; Double Sided Drift; Drift of Li ions; Large Sized Detectors.

This work is devoted to find an optimal mode of doublesided drift of lithium ions into monocrystalline silicon in order to obtain large sized Si(Li) p-i-n structured detectors of X-ray radiation. As it was shown in the work the proposed method of obtaining large sized Si(Li) p-i-n structured detectors helps to reduse the effect of impurity inhomogeneities in the initial silicon crystal to detectors' electro-physical characteristics.

Keywords : Si(Li) Detectors; Double Sided Drift; Drift of Li ions; Large Sized Detectors.

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